| 摘要 |
In a broadband signal switching equipment having crosspoint matrix using FET technology devices crosspoint-associated storage memory cells that control switching elements are each formed with two cross-coupled n-MOS inverter circuits each of which has its input side connected via a selection transistor to a selection line that carries a non-inverted and an inverted selection signal of one selection direction, respectively. Both selection transistors receive on their control electrodes the selection signal of the other selection direction. The control electrodes of two load transistors of the two cross-coupled n-channel inverter circuits are connected to the selection line that carries the inverted selection clock signal of the other selection direction. An additional driver transistor of the same channel type as two driver transistors in the two cross-coupled n-channel inverter circuits is inserted between the two drive transistors of the two cross-coupled n-channel inverter circuits and ground or a feed potential terminal. The control electrode of this additional driver transistor is connected to the selection line that carries the inverted selection clock signal of the other selection direction.
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