| 发明名称 |
INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED ALGAAS LAYERS |
| 摘要 |
<p>INTEGRATED CIRCUITS EMPLOYING PROTON-BOMBARDED A1GaAs LAYERS The property of materials in the GaAs/AlGaAs system, whereby at certain doses proton bombarded n-type material becomes highly resistive but p-type material remains highly conductive, is utilized to fabrication of integrated circuits which include buried semiconductor interconnections or bus bars between devices.</p> |
| 申请公布号 |
CA1217879(A) |
申请公布日期 |
1987.02.07 |
| 申请号 |
CA19840466522 |
申请日期 |
1984.10.29 |
| 申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY |
发明人 |
FOCHT, MARLIN W.;KOSZI, LOUIS A.;SCHWARTZ, BERTRAM |
| 分类号 |
H01L21/762;H01L21/265;H01L21/266;H01L21/3205;H01L21/324;H01L21/74;H01L21/76;H01L21/8252;H01L23/52;H01L23/535;H01L27/15;(IPC1-7):H01L21/324 |
主分类号 |
H01L21/762 |
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