| 摘要 |
PURPOSE:To make it possible to conduct a uniform planar development on a wafer maintaining a constant temperature by a method wherein the development in a photoengraving process is performed in a gas atmosphere. CONSTITUTION:Developing solution 3 is evaporated, the resist surface facing downward of a water 1, 6n a gas atmosphere is dipped into the developing solution. As a result, the boiling point of evaporation of the developing solution 3 is always fixed, and a constant temperature of the atmosphere can be maintained at all times. The evaporated gas is reacted with the resist located below the surface of the wafer 1 and returns to a liquid, it drips when it becomes fixed weight, and the new gas and the resist are reacted with each other. As a result, a uniform planar development is conducted on the wafer. |
