| 摘要 |
PURPOSE:To make it possible to make large the effective area of a capacitor by a method wherein a first conductor layer constituting an electrode is connected with a semiconductor substrate through a second conductor layer. CONSTITUTION:Before a thick insulator layer 14 for making wide a capacitor electrode is formed, a conductor layer 15 is previously formed on contact regions 7. This layer 15 can be formed extending on a field oxide film 2 and an element region 3. Accordingly, there is no need to limit window regions of the layer 14 formed on this layer 15 within the regions 7, the window regions only have to be within an area which is occupied by the layer 15 and the widths of the window regions can be widened to a dimension close to the width of the layer 15. Thereby, an aspect ratio of etching can be made small and the area of a capacitor can be easily widened without a special trouble in a process. |
