发明名称 BASE DRIVE CIRCUIT FOR TRANSISTOR
摘要 PURPOSE:To reduce the degree of saturation of a main transistor immediately after turn on by a method wherein the parallel circuit of a capacitor and a discharging resistor is connected in parallel to more than one of a plurality of collector catch diodes. CONSTITUTION:A capacitor 10 and a discharging resistor 11 are connected in parallel to the collector catch diode 9 of a plurality of collector catch diodes 8, 9, which are connected in series. When an on-off commander 13 outputs a command, a forward bias resistor 6 is put ON to provide the base of a main transistor 3 with forward bias current and turn on a main transistor 3. Base current 1a, rushing into the base, is reduced by increasing the on-voltage of the main transistor 3 upon only the turn on whereby the degree of saturation of the main transistor 3 immediately after the turn on is reduced. According to this method, high-speed and high-frequency switching may be effected.
申请公布号 JPH02254966(A) 申请公布日期 1990.10.15
申请号 JP19890076266 申请日期 1989.03.28
申请人 FUJI ELECTRIC CO LTD 发明人 ISHIBASHI HIDEAKI
分类号 H02M1/08;H03K17/04 主分类号 H02M1/08
代理机构 代理人
主权项
地址
您可能感兴趣的专利