| 摘要 |
PURPOSE:To produce a titled mask without deformation of org. thin films by etching a substrate selectively from the rear surface by leaving its outside circumferential part, then removing the 1st etching protecting layer, etching a rigid thin film and removing the 2nd ething protecting layer. CONSTITUTION:The 1st etching protecting layer 12 of a titanium film and a gold film, a polycrystalline silicon film 13, the 2nd etching protecting layer 14, and a thin polyimide film 15 are formed on the surface of a silicon substrate 11, and PMMA resist is coated thereon. After patterns are drawn, this is developed. With the PMMA resist patterns as a mask, gold plating is carried out on the film 15 to form a mask pattern, and the PMMA resist is removed in oxygen plasma. The substrate is selectively etched from the rear surface with a hydrofluoric acid/nitric acid etching soln, by leaving the peripheral part of the substrate 11. After the layer 12 is removed with aqua regia, the film 13 is etched and the 2nd etching protecting layer is removed, whereby the titled mask of high accuracy is obtained. |
