| 摘要 |
PURPOSE:To obtain an inexpensive fine deposition pattern forming method by drying and exposing a second-layer resist using near-ultraviolet rays and then exposing a fist-layer far-ultraviolet rays for obtaining a lift-off pattern corresponding to a specified mask pattern. CONSTITUTION:A second-layer resist is exposed and developed by using a mask 4 forming a specified pattern and then performing irradiation with a lamp emitting near-ultraviolet rays as shown by an arrow A to allow a part which was exposed to near-ultraviolet rays to be melted. After that, the remaining part is subjected to a specified post-baking treatment (for example, heating for 25 minutes at 140 deg.C), thus curing the second-layer resist 3 again. Then, by irradiation of far-ultraviolet rays as shown by an arrow B and then drying and exposing it, the dried and exposed first layer resist 2 is eliminated. It is possible to form a specified fine deposition pattern by this kind of inexpensive method. |
