CRYSTAL GROWTH METHOD FOR COMPOUND SEMICONDUCTOR,申请号JP19890075718-传众专利搜索

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发明名称	CRYSTAL GROWTH METHOD FOR COMPOUND SEMICONDUCTOR
摘要
申请公布号	JPH02253685(A)	申请公布日期	1990.10.12
申请号	JP19890075718	申请日期	1989.03.27
申请人	MITSUBISHI ELECTRIC CORP	发明人	HATTORI AKIRA;SONODA TAKUJI
分类号	H01L21/203;H01S5/00	主分类号	H01L21/203
代理机构		代理人
主权项
地址

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