发明名称 PHOTORESIST COMPOSITION
摘要 PURPOSE:To provide a photoresist composition superior in developability, film enduring rate, and the like by using a combination of a binary copolymer of p- and m-hydroxystyrene derivatives as an alkali-soluble resin and a photosensitive agent. CONSTITUTION:The photoresist composition to be used comprises the photosensitive agent and a solvent and the alkali-soluble binary copolymer of p- and m-hydroxy styrene derivatives, such as hydroxystyrene of hydroxy-alpha- methylstyrene represented by general formula I, prepared from a mixture of a 95 - 75 p-isomer and a 5 - 25% m-isomer. When the p-isomer is below 75%, the alkali-solubility in an alkaline developing solution is lowered and development becomes difficult, and when it is over 95%, solubility is also lowered.
申请公布号 JPH02253262(A) 申请公布日期 1990.10.12
申请号 JP19890073994 申请日期 1989.03.28
申请人 TOSOH CORP 发明人 TODOKO MASAAKI;YAMAMOTO TAKASHI;KIYOTA TORU
分类号 G03F7/008;G03F7/022;H01L21/027 主分类号 G03F7/008
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