| 摘要 |
In the fabrication process of a DMOS transistor, a window is formed between polysilicon gate regions. A self-aligning oxide is deposited to cover the exposed side walls of the polysilicon gate regions. P-type impurities are implanted at the exposed surface of the window between the side walls. N-type impurities are implanted in the window region to form a junction adjacent to the polysilicon gate regions. Metal contacts and a passivation layer are subsequently deposited by masking, and contact windows are formed to complete the transistor structure. |
