发明名称 CERAMIC MULTILAYERED CIRCUIT BOARD AND SEMICONDUCTOR MODULE
摘要 <p>PURPOSE:To construct a high-density ceramic multilayer circuit board, incorporating low-resistance materials, capable of high-reliability and high-density installation of semiconductor elements by a method wherein a ceramic multilayered circuit board is built of glass with its softening point lower than the melting point of wiring conductor layers. CONSTITUTION:A hollow tiny ball is chiefly composed of silica, which is the substance equipped with the lowest dielectric constant among inorganic materials, for the ball to be eguipped with the loest dielectric constant possible, and the ball is not larger than 100mum in diameter. As the ceramic material to combine the hollow silica balls, because such a material needs to be subjected to sintering at a temperature lower than the melting point of such a wiring conductor as gold, copper, or silver, a glals capable of softening at a temperature lower than the melting point of such metals or a crystallized glass is used. This method enables semiconductor elements to be installed in enhanced density and to be reliable in their connection. A carrier substrate mounted with semiconductor elements may be removed from or attached to a ceramic multilayered circuit board at a soldered region, which contributes to the protection of semiconductor element surfaces.</p>
申请公布号 JPS62287658(A) 申请公布日期 1987.12.14
申请号 JP19860130136 申请日期 1986.06.06
申请人 HITACHI LTD 发明人 USHIFUSA NOBUYUKI;SHINOHARA KOICHI;NAGAYAMA NOBUSHIGE;OGIWARA SATORU;SOGA TASAO
分类号 H01L23/538;C03C3/066;C03C3/093;H01L23/498;H05K1/03;H05K3/46 主分类号 H01L23/538
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