| 摘要 |
PURPOSE:To eliminate defects due to ion implantation, by using a pulse voltage for a bias, which is applied across a semiconductor singlecrystal substrate and an ionizing evaporation source. CONSTITUTION:In a vacuum container 1, a silicon evaporating source 2 for electron beam heating, an antimony evaporating source 3 and a silicon substrate holder 4 with a heating mechanism are provided. The silicon evaporating source 2, the antimony evaporating source 3 and the silicon substrate holder 4 are provided with terminals 6, 8 and 5 for applying voltages. The DC voltage of the maximum of 600 V is applied across the terminal 5 and the terminal 6 so that the terminal 5 becomes negative. A pulse bias 7 is also applied across the terminals 5 and 6. Under the state the pulse bias voltage 7 is applied across the semiconductor single-crystal substrate and the ion evaporating source 2, epitaxial growth is carried out. Thus defects induced by the ion implantation are decreased.
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