发明名称 THIN FILM FORMING DEVICE
摘要 PURPOSE:To form a thin film having high reliability on a substrate with good selectivity by providing devices for cooling and heating plural reactive gases so that the energy necessary for inducing a chemical reaction can be supplied only onto the substrate. CONSTITUTION:Plural kinds of the reactive gases are supplied through gas introducing pipes 14, 15 into a chamber 12. The cooling mechanism 22 and heating mechanism 24 are provided to said pipes 14, 15 to cool or heat the gases supplied into the chamber 12. Since the substrate 26 has small heat capacity, the substrate is easily heated by the heating gas from the pipe 15 and the thin film is grown only on the surface of the substrate 26. The thin film is hardly stuck to the other parts. The temp. distribution of the substrate 26 is uniformized with good reproducibility and the thin film having the film thickness with less dispersion is obtd.
申请公布号 JPS63179075(A) 申请公布日期 1988.07.23
申请号 JP19870008259 申请日期 1987.01.19
申请人 TOSHIBA CORP 发明人 KUNISHIMA IWAO
分类号 H01L21/285;C23C16/06;C23C16/14;C23C16/34;C23C16/40;C23C16/44;C23C16/448 主分类号 H01L21/285
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