| 摘要 |
A high electron mobility transistor includes a donor layer of aluminum gallium arsenide (AlGaAs) for forming a two-dimensional electron gas (2DEG) in a proximate buffer layer of gallium arsenide. The donor layer has a composition profile including a relatively high concentration of aluminum over a first thickness portion proximate the buffer layer, a low and constant concentration of aluminum over a second thickness portion distal from the buffer layer and a graded concentration of aluminum in a third thickness portion of the donor layer between the first and second thickness portions, transitioning between the high and the low concentrations of aluminum. The donor layer has a doping profile including a high level doping spike in the first thickness portion and a low doping level over the second and third thickness portions.
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