DEVICE FABRICATION AND RESULTING DEVICES

摘要

Fine featured devices are produced by a series of fabrication steps including exposing selective surface regions to irradiation, e.g. to an ion beam, generally to result in removal of masking material within irradiated regions. In most instances, subsequent etching is under conditions such that bared material is preferentially removed. Etch-removal and irradiation are such that overgrown material is of device quality at least in etched regions. The inventive process is of particular value in the fabrication of integrated circuits, e.g. circuits performing electronic and/or optical functions. The inventive process is expediently used in the fabrication of structures having minimum feature size of 1 micrometer and smaller. Patterning is dependent upon masking material of a maximum thickness of 100 ANGSTROM .