| 摘要 |
<p>The device includes a substrate 1 having a conductive electrode 2, and a first semiconductor layer 31 of a first conductivity type, a substantially intrinsic second semiconductor layer 32 and a third semiconductor layer 33 of the opposite conductivity type successively deposited on the conductive electrode, the hydrogen content in at least the first semiconductor layer 31 being 10% or less and at least the second semiconductor layer 32 being formed by an amorphous semiconductor layer. …<IMAGE>… </p> |
