| 摘要 |
PURPOSE:To solve a problem that the ON resistance of a large current switch is high and to obtain a semiconductor switch, in which the ON resistance of the large current switch is low by forming a diffused layer on the surface of a substrate, and connecting the layer to the substrate through a high concentration embedded layer, which is diffused upward into an epitaxial layer. CONSTITUTION:A P-type epitaxial layer 14, whose resistivity is 2-5OMEGA.cm and thickness is about 10 mum, is formed on the entire surface of a semiconductor substrate 11, in which embedded layers 12 and 13 are formed. At this time, the P-type embedded layer 12 is diffused upward into the epitaxial layer 14. The N-type embedded layer is also diffused upward into the epitaxial layer 14. An N-type diffused layer 15b is formed directly on the N-type embedded layer 13 so as to reach the N-type embedded layer 13 from the surface of the P-type epitaxial layer 14. The layer 15b is connected to the N-type semiconductor substrate 11 through said N-type embedded layer 13.
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