发明名称 FORMATION OF MULTILAYER INTERCONNECTION STRUCTURE
摘要 PURPOSE:To form a through-hole having high density with high precision by burying the inside of the through-hole with an electroless plating layer through an electroless plating method up to the extent of approximately the thickness of an inter-layer insulating film, reducing or removing the stepped section of the through-hole and the upper surface of the inter-layer insulating film and applying and shaping a second layer wiring. CONSTITUTION:A through-hole 33 is constituted to an inter-layer insulating film 31 corresponding to the upper section of a first layer wiring 29. A side wall 35 formed at that time is shaped in the surface approximately vertical to the surface of the first layer wiring 29. A metal capable of being electroless- plated to gold (an Au layer 27) exposed to the surface of the first layer wiring 29 through the through-hole 33 such as gold, copper or other metals are plated through an electroless plating method and the electroless plating layer 37 is shaped, and the through hole 33 is back-filled. An arbitrary proper metal (such as gold) having wettability with the metal constituting the electroless plating layer 37 is applied, and a second layer wiring 29 is formed through patterning. Accordingly, a multilayer interconnection using the through-hole can be formed with high density and high precision.
申请公布号 JPS63211649(A) 申请公布日期 1988.09.02
申请号 JP19870043747 申请日期 1987.02.26
申请人 OKI ELECTRIC IND CO LTD 发明人 SANO YOSHIAKI
分类号 H01L21/3205 主分类号 H01L21/3205
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