| 摘要 |
PURPOSE:To prevent the breakdown of a wiring at a contact region, by forming metal on a contact region, thereafter forming an interlayer insulating film, applying positive type resist thereon, exposing and developing the entire surface, forming a hole in the positive resist on the contact region, and thereafter performing etching. CONSTITUTION:A positive type resist film 17 is applied on a part, where an interlayer insulating film 16 is formed. The thickness of the positive type resist film becomes thin at a part, where a step part is steep, or at a region, where the step part is high. When the entire surface of a wafer is exposed under this state, the thin positive type resist film on the region, where metal is formed, is exposed to light, which is reflected from the surface of the metal, and the light from the upper side. Therefore, the amount of the absorbed light becomes much in comparison with the resist film in the other region. When development is performed, the positive type resist film on the region, where the metal is formed, is developed in a developing time shorter than the time for the positive type resist in the other region. Then, the interlayer insulating film on the metal is etched, and the surface of the metal is exposed. The positive type resist film is removed, and a lower metallic wiring layer 18, which is to become a wiring, is formed. Thus a contact region and the metallic layer 18, which is to become the wiring, are connected.
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