发明名称 Ion beam generator for semiconductor processing
摘要 The generator has a supply system for atoms of material, the supply system feeding a particle beam with the atoms to preset region. Laser beams are supplied to the region by a laser generator, in order to energise the material atoms into a Rydberg state. The atoms in the latter state are exposed to a preset electric field from a semiconductor assembly. Thus the material atoms are ionised and guided into a preset direction. The field generating assembly pref. comprises a substrate with an oppositely located electrode, supplied by a preset potential from a current supply. Thus generating the required electric field between the electrode and substrate.
申请公布号 DE3817604(A1) 申请公布日期 1988.12.08
申请号 DE19883817604 申请日期 1988.05.24
申请人 MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 OOMORI, TATSUO;ONO, KOUICHI;FUJITA, SHIGETO, AMAGASAKI, HYOGO, JP
分类号 H01J27/24;H01J37/08;(IPC1-7):H01J37/08;H01J3/04;H01L21/203;H01L21/265;H01T23/00 主分类号 H01J27/24
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