发明名称 |
Ion beam generator for semiconductor processing |
摘要 |
The generator has a supply system for atoms of material, the supply system feeding a particle beam with the atoms to preset region. Laser beams are supplied to the region by a laser generator, in order to energise the material atoms into a Rydberg state. The atoms in the latter state are exposed to a preset electric field from a semiconductor assembly. Thus the material atoms are ionised and guided into a preset direction. The field generating assembly pref. comprises a substrate with an oppositely located electrode, supplied by a preset potential from a current supply. Thus generating the required electric field between the electrode and substrate.
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申请公布号 |
DE3817604(A1) |
申请公布日期 |
1988.12.08 |
申请号 |
DE19883817604 |
申请日期 |
1988.05.24 |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
OOMORI, TATSUO;ONO, KOUICHI;FUJITA, SHIGETO, AMAGASAKI, HYOGO, JP |
分类号 |
H01J27/24;H01J37/08;(IPC1-7):H01J37/08;H01J3/04;H01L21/203;H01L21/265;H01T23/00 |
主分类号 |
H01J27/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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