发明名称 HIGHLY PURE TITANIUM AND THE METHOD
摘要 Highly pure titanium contains less than 200 ppm oxygen, less than 30 ppm each of Fe, Ni and Cr and less than 0.1 ppm each of Na and K. The pure metal has a residual resistance ratio RRR273 of 45 or more. Pref. the metal contains less than 0.001 ppm of uranium and thorium. The metal can be readily produced by subjecting the pure metal obtained dry electrolysis to electron beam refining. It can be used to fabricate wiring networks for semiconductor devices.
申请公布号 KR900007453(B1) 申请公布日期 1990.10.10
申请号 KR19870005397 申请日期 1987.05.29
申请人 TOSHIBA CORP. 发明人 SIMOTORI KAZUMI;OCHI YOSHIHARU;ISHARA HIDEO;UMEKI DAKENORI;ISKAMI DAKASHI
分类号 C22C29/02;C22B9/22;C22B34/12;C22C14/00;C23C14/34;C25C3/28;H01L21/768;H01L23/532;(IPC1-7):C22C29/02 主分类号 C22C29/02
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