发明名称 |
SEMICONDUCTOR DEVICE HAVING IMPROVED GATE CAPACITANCE AND MANUFACTURING METHOD THEREFOR |
摘要 |
In a semiconductor device for an SRAM having a capacitor formed between a gate electrode of a MOS transistor and an electrically conductive layer provided in the upper layer of the electrode, there is described a semiconductor device in which the gate electrode has a laminated structure consisting of a polycrystalline silicon layer and a refractory metal silicide layer with a polycrystalline silicon layer in the topmost layer thereof. |
申请公布号 |
EP0339586(A3) |
申请公布日期 |
1990.10.10 |
申请号 |
EP19890107493 |
申请日期 |
1989.04.25 |
申请人 |
NEC CORPORATION |
发明人 |
KITAOKA, NOBUYASU |
分类号 |
H01L21/3205;H01L21/822;H01L21/8244;H01L23/52;H01L27/04;H01L27/11;H01L29/49;H01L29/78;(IPC1-7):H01L29/60;H01L27/10;H01L21/28 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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