| 摘要 |
PURPOSE:To obtain the curved optical wave guide layer having high propagation ratio by successively, selectively and epitaxially growing a II-VI compd. semiconductor having a smaller refractive index as a clad layer and the same compd. having a larger refractive index as the optical wave guide layer on a substrate, and then forming a 45 deg. mirror. CONSTITUTION:An SiO2 film 15 is deposited on the GaAs substrate 11 by a thermal CVD method and after the SiO2 15 on the part to be formed with the light guide is removed by photolithography, the lower clad layer 12, the optical wave guide layer 13 and the upper clad layer 14 are successively epitaxially grown with the residual SiO2 film 15 as a mask. The optical wave guide layer 13 consisting of ZnSe is selectively grown on the (100) face of the GaAs substrate at this time, then the growth speed of the (100) face and (111) face is larger than the growth speed of the other crystal faces and, therefore, the (100) face to constitute a specular face is 45 deg. with the optical wave guide extending in the (110) direction and perpendicular to the (100) face of the substrate surface. The critical angle of the internal reflection at the ZnSe/air boundary is 25.3 deg. and, therefore, the incident light on the mirror at 45 deg. incident angle does not transmit the specular surface. The light is confined in the optical wave guide in this way and is curvilinearly propagated. |
