发明名称 |
Semiconductor device |
摘要 |
A MOS memory is formed in a semiconductor bulk, whereas a barrier semiconductor layer is disposed at the boundary between a MOS memory portion and the semiconductor bulk in order to reduce the effect of undesirable carriers excited by alpha -particles. The barrier semiconductor layer is designed to permit operation of the memory at low temperature while reducing the incidence of soft errors due to alpha -particles.
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申请公布号 |
US4864382(A) |
申请公布日期 |
1989.09.05 |
申请号 |
US19880148052 |
申请日期 |
1988.01.25 |
申请人 |
HITACHI, LTD. |
发明人 |
AOKI, MASAAKI;YANO, KAZUO;MASUHARA, TOSHIAKI |
分类号 |
H01L27/108;H01L29/10;H01L29/167;H01L29/66 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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