| 摘要 |
PURPOSE:To obtain the optical wave guide of a smaller propagation loss by forming an optical wave guide layer and clad layers to sandwich this layer of a material matched in grating or nearly matched in grating to a substrate and a III-V compd. semiconductor having excellent crystallinity and laminating II-VI compd. semiconductor thereon. CONSTITUTION:The 1st clad layer 202 consisting of AlxGa1-xAs and the optical wave guide layer 203 consisting of AlyGa1-yAs are successively laminated on the GaAs substrate 201 which is a III-V compd. semiconductor by a crystal growth method. Further, the 2nd clad layer 204 consisting of ZnSe which is the II-VI compd. semiconductor is grown thereon. A resist or the like is thereafter used and is patterned to an optical wave guide shape. The 2nd clad layer 204 is etched to the intermediate point by using the resist as an etching mask 205; thereafter, the mask 205 is removed and the optical wave guide is completed. The laminated material of this optical wave guide is the material which is subjected to grating matching to the GaAs substrate 202 or having the lattice constant approximate to the lattice constant of the substrate and having the excellent crystallinity. The optical wave guide of a low loss is obtd. in this way. |
