MASK MANUFACTRING METHOD

摘要

PURPOSE: To make it possible to form line patterns having the min. width in the first period of a process as hole patterns in a mask by forming these line patterns by a sidewall technique. CONSTITUTION: A photoresist structure 7 has a width D equal to about 1.0μm or over the same which is a future inter-line spacing. Silicon oxide 8 covers the entire horizontal surface and entire perpendicular surface of the resist structure 7 and an oxide layer 2. The thickness d1 on the perpendicular surface determines the line width of the desired fine structure. A resist layer 9 for flattening is removed to the extent of exposing the start positions A of the perpendicular ends of the sidewall coatings of the resist structure 7 and is provided with the photoresist layer 10 to be deposited on the flattening structure. As a result, the horizontal and perpendicular regions of the nitride layer 8 not covered by this layer are removed by isotropic etching. The openings delineated by spaces A-B are precisely transferred to the oxide layer 2 by reactive ion etching. As a result, the mask transferred with the finest line width to be plotted as the hole patterns is formed.