发明名称 INTEGRATED CIRCUIT DEVICE
摘要 <p>The integrated circuit device includes a stacked layer unit having a number of stacked layers each having an insulation layer and at least one conductive layer strip formed on a surface of the insulation layer, and at least one chip mounted on the top of the insulation layer and having a number of circuit elements. The IC device also includes at least one first conductive member formed in the stacked layer unit, having a low inductance for first signals applied to it and operatively connecting the first signals to be transferred between the circuit elements. The IC device further includes at least one second conductive member formed in the stacked layer unit, having a higher inductance for the first signals than that of the first conductive member.</p>
申请公布号 KR900007299(B1) 申请公布日期 1990.10.08
申请号 KR19860002694 申请日期 1986.04.09
申请人 FUJITSU CO.,LTD. 发明人 MIYAUCHI AKIRA;NISIMOTO HIROSI;OKIYAMA DADASI;KITASAGAMI HIROO;SUGIMOTO MASAHIRO;TAMADA HARUO
分类号 H01L23/12;H01L21/60;H01L23/057;H01L23/498;H01L23/64;H01P1/00;H01P3/08;H01P5/00;H01P5/02;H01P5/08;H05K1/02;H05K1/18;H05K3/32;H05K3/40 主分类号 H01L23/12
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