| 摘要 |
PURPOSE:To reduce cost by a method wherein a diode or a varistor element is formed by laminating metal, a semiconductor, metalloid or a transparent conductive material on the surface of a metal sulfide semiconductor wherein the metal surface has been sulfidized. CONSTITUTION:A diode or a varistor element is formed by laminating metal, a semiconductor, metalloid or a transparent conductive material on the surface of a metal sulfide semiconductor wherein the metal surface has been sulfidized. Thus wet processing can be frequently used such as plating method, sputtering method, evaporation method, etc., for forming a metallic layer on a substrate, surface sulfidation with H2S or the like for sulfidizing the metal surface, and the plating method, sputtering method, evaporation method, etc., as a metallic layer or ITO for a sulfide film. Thus the cost for the facility can be reduced as well as cheap processing cost can be realized. |
