| 摘要 |
PURPOSE:To obtain an extremely flat wafer with the LTV value 0.5-0.6mum by polishing the semiconductor wafer with an abrasive cloth having a high compression elastic modulus and a suppressed aging fluctuation. CONSTITUTION:A work is pressed on the surface plate of a rotary polishing machine stuck with an abrasive cloth, and a work is polish-machined while an abrasive liquid mainly containing SiO2 fine grains as free abrasive grains is fed. At this time, a compression force is repeatedly applied and the compression elastic modulus is increased while water or the abrasive liquid is fed to the abrasive cloth to be used on the surface plate of the rotary polishing machine, then the primary surface polish machining of the work is started after the stable region is attained where the compression elastic modulus is not changed. |
