| 摘要 |
A field power transistor structure of the N-type is formed in a mono-crystalline silicon substrate 1 and has a source area 2, a channel area 11 and a drain area 3. The channel area is covered by a thin electrically insulating layer 4. On this layer is a layer 5 of a high-temperature superconductive material which carries out field-induced superconductivity. The layer has an area 8 in the middle of the channel area 11 which is not superconductive at the component's working temperature, and areas 6,7 which are superconductive at the working temperature. These latter areas are, like the field current transistor structure's source and drain areas, provided with connection devices 61,71,21,31. By generating a control voltage between the connectors 61,21 and a second, preferably equally large, control voltage between the connectors 71,31 the layer 5 is given a positive potential relative to the substrate. By this means a P-conductive channel 81 is formed in the layer 5, where the increased porosity makes the material change to a superconductive state. The thickness of the layer 4 is at most equal to the coherence length for superconductivity, for which reason the superconductivity in the channel 81 gives rise to a superconductive channel 12 in the substrate. A load circuit can be connected to the contacts 21,31 of the source and drain areas or to the contacts 61,71 of the superconductive layer. <IMAGE> |
