| 摘要 |
PURPOSE:To obtain a lateral-type DMOS which can be integrated highly by providing a first conductivity-type high-concentration impurity diffusion layer through a groove, providing a second conductivity-type low-concentration impurity diffusion layer surrounding the one side of the diffusion layer, and by providing a gate electrode through a gate insulating film overlapping with the low-concentration impurity diffusion layer. CONSTITUTION:At least one or more grooves are provided on a semiconductor substrate 1 and there is a first conductivity-type high-concentration impurity diffusion layer 3 beyond the groove. On one side of the first conductivity-type high-concentration impurity diffusion layer 3 is provided a second conductivity- type low-concentration impurity diffusion layer 4 surrounding it, a gate electrode 5 is provided through a gate insulating film 9, overlapping with the second conductivity-type low-concentration impurity diffusion layer 4, and the above groove is embedded with an insulator 2. Thus, a depletion layer extends along the groove and the distance between the gate and drain can be provided within the semiconductor substrate for achieving a high concentration. Besides, the groove is effective in isolating the adjacent elements, thus realizing a highly reliable semiconductor device. |
