发明名称 DATA OUTPUTTING BUFFER FOR STATIC RAM USING HIGH IMPEDANCE
摘要 The data output buffer comprises a first NOR circuit (41) for receiving a positive output (SAS) of the differential amplifier (SA) and an output enable signal (OE) of the read/write control buffer (R/ WB); a second NOR circuit (42) for receiving the negative output (SAS) of the amplifier (SA); a common ground connecting means (43) commonly connected between a ground of the circuit (41) and a ground of the circuit (42); an inverting circuit (44) receiving an output signal of the circuit (41); a set form circuit (45) receiving an output signal of the circuit (42); and a data output circuit (46) having transistors (T16)(T17).
申请公布号 KR900007214(B1) 申请公布日期 1990.10.05
申请号 KR19870009589 申请日期 1987.08.31
申请人 SAM SUNG ELECTRONICS CO.,LTD. 发明人 KIM BYUNG-YUN
分类号 G11C11/417;G11C7/10;G11C11/40;G11C11/409;G11C11/419;(IPC1-7):G11C11/40 主分类号 G11C11/417
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