| 摘要 |
PURPOSE:To enable a sufficient capacitor capacity to be secured and obtain a highly reliable DRAM without any interference among cells regardless of reduction in memory cell occupied area by forming the capacitor partially within a trench and by laminating it on a MOSFET partially. CONSTITUTION:In a semiconductor storage device in that a plurality of memory cells are placed, where each cell is formed of a MOSFET and a capacitor, a bit wire 10 is connected to either a source or a drain 5 of the MOSFET, and a word wire is connected to a gate electrode 4, a part of the said capacitor continues a trench type capacitor TC formed in the trench formed in the semiconductor substrate surface, while another part of it continues a laminated type capacitor SC which is laminated on a MOSFET. For example, memory cells, two in a set, are formed within an activation region which is isolated by the use of an element isolation insulating film 2 where one of them is a trench-type capacitor structure memory cell, while the other is a memory cell of laminated type capacitor structure. |
