| 摘要 |
<p>PURPOSE:To easily peel a photoresist layer on patterned films after patterning the films by plasma following exposing the entire positive type-resist layer after resist layer is exposed and developed. CONSTITUTION:Films 4 to 6 to be patterned are coated with the positive type resist layer 11, which is exposed and developed for patterning; and the whole of the remaining positive type resist layer 11 is exposed. Thus, the exposure processing is performed twice to make inter-molecule bonds weak in the positive type resist layer 11 used for a mask, so when the films 4 to 6 are etched by oxygen plasma, the positive type-resist layer 11 becomes hard to set. Consequently, the resist film is easily peeled with a resist removing solvent which is generally used.</p> |
