发明名称 PRODUCTION OF COMPOSITE TYPE SEMICONDUCTOR LASER DEVICE
摘要 PURPOSE:To improve positional accuracy and to miniaturize the above device by forming a semiconductor laser and movable body on the same substrate by using a semiconductor production process. CONSTITUTION:The semiconductor laser and the movable body are formed on the same substrate by using the semiconductor production process. For example, the GaAlAs semiconductor laser 22 and a polygonal mirror 25 fixed with electrodes 27, 30 and a shaft 25 and is integrated with a vane-shaped part 24 are held in a movable state on the Si substrate 21. The semiconductor laser and the movable body, such as polygonal mirror, are formed on the one substrate by using the semiconductor production process, such as etching and lithography, and, therefore, the positional accuracy is extremely high and the occupying space is diminished to the extreme limit.
申请公布号 JPH02250023(A) 申请公布日期 1990.10.05
申请号 JP19890070856 申请日期 1989.03.23
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SHIBAIKE SHIGETO
分类号 B41J2/44;G02B6/12;G02B26/10;G02B26/12;G03G15/04;H01S5/00;H01S5/026;H04N1/04;H04N1/113;H04N1/23 主分类号 B41J2/44
代理机构 代理人
主权项
地址