| 摘要 |
The invention relates to the field of the manufacture, by vapour phase deposition, of thin layers of a monocrystalline, polycrystalline or amorphous material, onto a substrate of identical or different kind. The aim is to provide a method permitting construction of this structure, comprising modulation of both the composition and the doping, in a direction not normal to the surface of the substrate, in particular sideways, in order to obtain a planar technology. According to the invention, the said thin layer (63, 64, 65, 66, 67) is produced by forced epitaxy, starting from a crystalline nucleus (58), in the gaseous phase, between two confinement layers (52, 54) made of a separate material, in such a way that there can be neither nucleation nor deposition of the semiconductor material onto the surfaces of the said confinement layers (52, 54), and in that the variation in the gaseous mixture of the said gaseous phase is controlled in order to obtain the said modulation of the composition and/or of the doping of the said thin layer (63, 64, 65, 66, 67). <IMAGE>
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