| 摘要 |
The semiconductor device comprises a semiconductor substrate (21); a second conduction type of a first area (30) formed onto the substrate (21); a second conduction type of a capacitor area (26) formed onto the substrate (21); and a capacitor electrode (28) formed on the surface of the capacitor area (26). The capacitor electrode (28) covers an area between the capacitor area (26) and the first area (30). A MOS transistor is composed of the first area (30), a second conduction type of a first electrode area (52), a second conduction type of a second electrode area (53) and a gate electrode (54).
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