CHARGE TRANSFER TYPE SOLID STATE IMAGING DEVICE

摘要

One solid-state imaging device includes a vertical CCD shift register for transferring electric charge. The electrode of the veritcal CCD located nearest to the susbtrate is extended outside of the region of the vertical CCD to a region of a layer where isolation is required. The layer is thus imparted with two functions, that is, the function of the CCD electrode and that of the isolation electrode. An overflow transistor is also provided to discharge excess charge produced by high intensity light. The gate electrode on the isolation region is applied with potential of low level during the horizontal scanning period to thereby hold the region underlying the gate electrode in the accumulation state.