| 摘要 |
PURPOSE:To obtain a semiconductor device which is stable for thermal treatment and which has less variability of element characteristics by laminating an amorphous silicon film and a heat-resistant and conductive nitriding metal film or metal film silicide at the take-out port of one electrode of lower-part electrodes. CONSTITUTION:An amorphous silicon film 105, a nitriding metal film 107, or a metal film silicide with heat resistance and conductivity is laminated at one electrode take-out port of a lower electrode, while a metal film 106 and a nitriding metal film 107 or a metal film silicide with heat resistance and conductivity are laminated at the other electrode take-out port. For example, after forming an interlayer insulation film 104, a contact hole is formed at a part where storage elements are formed, the amorphous silicon film 105 is subjected to vapor growth for patterning. Then, after forming a contact hole at a part where a diffusion layer 103 is connected to the lead-out wiring, a titanium film 106 is evaporated and is subjected to patterning. After that, the titanium nitride film 107 and an aluminum film 108 are formed for machining to a desired pattern. |
