Method for reducing the charge carrier lifetime

摘要

A method for reducing the charge carrier lifetime in a semiconductor component involves subjecting a semiconductor substrate (1), in order to generate recombination centres (4), to irradiation with high-energy protons (3) and, in order to ensure thermal long-term stability, subjecting it to tempering. The tempering step is carried out at an optimum temperature of from 260@C to 300@C for at least 30 minutes. The irradiation takes place after the metallisation process, and the tempering step is carried out in high vacuum.