| 摘要 |
PURPOSE:To unnecessitate a mask for forming a shifter and to enhance the yield of phase shift masks by forming a photosensitive resin film on the surface of a light shielding pattern on a transparent substrate, uniformly exposing the resin film through the substrate and forming a shifter of the resin film. CONSTITUTION:A light shielding pattern 12 of Cr, etc., is formed on a glass substrate 11 and the entire surface of the substrate 11 on the pattern 12 side is uniformly coated with a positive type resist 13 in a desired thickness. The resist 13 is prebaked, uniformly exposed with g- or i-beams through the substrate 11 and developed. The developed resist is uniformly exposed and post-baked to produce a phase shift mask having a shifter 13 on the pattern 12. When a negative type resist is used in phase of the positive type resist 13, a mask having a shifter 23 can be produced in the same way. |
