| 摘要 |
PURPOSE:To easily make analysis with good productivity without losing the electrolyzing power required for each of respective layers by analyzing the compsn. of the surface layer at the respective timing at the time of film formation to analyze the compsn. modulated structure of the multilayered films formed on a substrate. CONSTITUTION:Fe and Au are subjected to evaporation 12a, 12b in a vacuum chamber 13 and shutters 11a, 11b are opened and closed cooperatively with film thickness sensors 9a, 9b to deposit the Fe and Au by evaporation alternately on the substrate 2 by which the multilayered films are formed. An electron ray is made incident at about 1 deg. glancing angle with the film on the substrate 2 from an electron gun 1 installed in the chamber 13 simultaneously with this film formation to excite a characteristic X-ray. After the characteristic X-ray is detected by a semiconductor detector 13 in the chamber 3 and is amplified 4, the integration coefft. by the characteristic X-ray is separated and is taken into a data processor 6. The outputs of the sensors 9a, 9b are also amplified 10 and are taken into the processor 6 which displays and analyzes the intensity of the characteristic X-ray as the function of a film thickness. The temp. of the substrate 2 is so controlled 7 as to minimize the deviation from the reference value of the characteristic X-ray intensity of the Fe and Au set as the function of the film thickness in the processor 6, by which the multilayered films having the excellent steepness of the boundary are formed. |
