| 摘要 |
PURPOSE:To prevent deterioration in resolution by providing a charge transfer path tying a charge parallel input section connected to a photoelectric converting section, an input section of a charge transfer section and a transfer section corresponding to >=2 transfer electrodes in the unit bit of the charge transfer section. CONSTITUTION:The charge transfer path between he charge parallel input section 22 and the charge transfer section 23 in a photoelectric converting section providing plural photodetectors 2 on the 1st semiconductor substrate 1 has a width D corresponding to the unit bit of the transfer electrode of a CCD and the width is not almost different from the width of the charge storage section 14. Thus, electric charges stored in a part beneath a storage gate SG and surrounded by charge dam 10, i.e., the charge storage section 14 are all transferred in the unit bit of the charge transfer section 23 when a transfer gate TG is opened and the electric charges left in the charge storage section 14 do not almost exist. Then, the deterioration in the picked-up picture does not almost occur. |
