发明名称 |
Mos-pilot structure for an insulated gate transistor. |
摘要 |
<p>A MOS-pilot structure for an IGT device consisting of a multiplicity of IGT cells interconnected in a lattice network includes a plurality of pilot emitter electrodes each in electrical contact with only at least one pilot emitter region of a first plurality of the multiplicity of IGT cells and electrically isolated from a common cathode electrode of the multiplicity of IGT cells. The plurality of pilot emitter electrodes are each electrically connected to a contact metal strip deposited on the substrate surface and spaced therefrom by a layer of insulation. The contact metal strip is connected to ground potential through a sense resistor for producing a sense voltage responsive only to the channel currents flowing through the at least one pilot emitter regions; therefore, a MOS pilot structure that utilizes only the MOS channel current to produce the sense voltage to cause turn-off of the IGT device at a large total current is disclosed. The MOS-pilot structure does not suffer from the avalanche breakdown problems during turn-off, that are associated with other prior art IGT pilot structures.</p> |
申请公布号 |
EP0390485(A2) |
申请公布日期 |
1990.10.03 |
申请号 |
EP19900303234 |
申请日期 |
1990.03.27 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
PATTANAYAK, DEVA NARAYAN;BALIGA, BANTAVAL JAYANT |
分类号 |
H01L21/8234;H01L27/04;H01L27/088;H01L29/10;H01L29/739;H01L29/78 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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