发明名称 |
Wideband amplifier using fet. |
摘要 |
<p>The present invention concerns with a wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals. In particular, the wideband amplifier is characterized in that as a semiconductor element employed in the amplifier, a field-effect transistors (11) is used, the transistor (11) having a substantially flat characteristic of mutual conductance to a voltage (VGS) between a gate and a source with respect to the center of an operation point for suppressing a second order distortion of an output of the amplifier. And, there is also provided a wideband amplifier wherein in case of inspecting a field-effect transistor, the second order distortion in a high frequency is guaranteed to be a constant value or less by accepting only the wideband amplifier having a predetermined or lower value of the difference between the mutual conductances to the applied voltages at an input terminal having a constant difference therebetween.</p> |
申请公布号 |
EP0390494(A2) |
申请公布日期 |
1990.10.03 |
申请号 |
EP19900303245 |
申请日期 |
1990.03.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
NAMBU, SHUTARO;YAMASHITA, YASUHISA;GODA, KAZUHIDE |
分类号 |
H03F1/42;H03F1/32;H03F3/193 |
主分类号 |
H03F1/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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