发明名称 Wideband amplifier using fet.
摘要 <p>The present invention concerns with a wideband amplifier concurrently receiving multi-channel signals in a predetermined frequency range and amplifying the received signals. In particular, the wideband amplifier is characterized in that as a semiconductor element employed in the amplifier, a field-effect transistors (11) is used, the transistor (11) having a substantially flat characteristic of mutual conductance to a voltage (VGS) between a gate and a source with respect to the center of an operation point for suppressing a second order distortion of an output of the amplifier. And, there is also provided a wideband amplifier wherein in case of inspecting a field-effect transistor, the second order distortion in a high frequency is guaranteed to be a constant value or less by accepting only the wideband amplifier having a predetermined or lower value of the difference between the mutual conductances to the applied voltages at an input terminal having a constant difference therebetween.</p>
申请公布号 EP0390494(A2) 申请公布日期 1990.10.03
申请号 EP19900303245 申请日期 1990.03.27
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 NAMBU, SHUTARO;YAMASHITA, YASUHISA;GODA, KAZUHIDE
分类号 H03F1/42;H03F1/32;H03F3/193 主分类号 H03F1/42
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