发明名称 GRAIN BOUNDARY INSULATED SEMICONDUCTOR CERAMIC CAPACITOR AND MANUFACTURE THEREOF
摘要 <p>PURPOSE:To make it possible to simultaneously sinter a ceramic capacitor material, having a ceramic function, and an internal electrode material, and to easily obtain a grain boundary insulated semiconductor ceramic capacitor by a method wherein the capacitor is composed in such a manner that MnO2 and SiO2 are added to SrTiO3 having excessive Ti besides the addition of a semiconductor component. CONSTITUTION:A grain boundary insulated semiconductor ceramic capacitor is formed by having the below-mentioned materials added to SrTiO3 containing excessive Ti in such a manner that the mol ratio of Sr and Ti becomes 0.95<=Sr/Ti<=1.00. The materials referred to above are 0.05 to 2.0mol% of the element consisting at least of one or more kinds selected from Nb2O5, Ta3O5, V2O5, W2O5, Dy2O3, Nd2O3, Y2O3, La2O3 and CeO2, MnO3 and SiO2 of 0.2 to 5.0mol% in total, and Na2SiO3 of 0.05 to 2.0mol%, and Al2O3 of 0.05 to 2.0mol%. Ceramic capacitor material, having a ceramic function, and an internal electrode material are sintered simultaneously, and a grain boundary insulated semiconductor ceramic capacitor can be obtained easily.</p>
申请公布号 JPH02248015(A) 申请公布日期 1990.10.03
申请号 JP19890069652 申请日期 1989.03.22
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 UENO IWAO;WAKAHATA YASUO;OKAMOTO KAORI
分类号 H01G4/12;H01C7/10 主分类号 H01G4/12
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