Semi-conductor device and method of manufacturing the same.

摘要

The invention provides a semi-conductor device and a method of manufacturing such a device. The method comprises providing a semi-conductor substrate (101) of a first conductivity type, forming a gate electrode on the semi-conductor substrate including a first conductive layer (103) and a second conductive layer (105) superposed thereon, and forming source/drain regions (106) by ion implanting impurities of a second conductivity type into the semi-conductor substrate. The step of forming the gate electrode includes thermal annealing in order to contract the second conductive layer relative to the first conductive layer. The semi-conductor device thus provided has a first conductive layer which has a length greater by a pre-determined amount than a length of the second conductive layer and which overlaps the source/drain regions by predetermined amounts.