Indium borate phosphor and cathode-ray tube using the same.

摘要

An indium borate phosphor of this invention is represented by formula (In1-a-b-c-dTbaEubSmcMd)BO3 wherein [1] if b NOTEQUAL 0 and c NOTEQUAL 0, 1 x 10<-><6> </= a </= 1 x 10<-><2> 0 < b </= 1 x 10<-><1> 0 < c </= 1 x 10<-><3> 1 x 10<-><7> </= d </= 1 x 10<-><2> [2] if b = c = 0, 1 x 10<-><6> </= a </= 1 x 10<-><1> 1 x 10<-><7> </= d </= 1 x 10<-><2> and M is at least one element selected from the group consisting of Ti, P, Si, and Ge. This phosphor has a higher bonding force between BO3 ions and ions of In or any other contained metal than that of a conventional indium borate phosphor. As a result, the current-brightness and burning characteristics of the indium borate phosphor can be greatly improved.