| 摘要 |
Radiation-emitting semiconductor diodes in the form of a laser diode or in the form of a LED form important components in data-processing systems. There is especially need of diodes which emit in the visible part of the spectrum, which have a low starting current and which can be manufactured at low cost. A radiation-emitting semiconductor diode comprising above the active layer a cladding layer and a GaAs contact layer, into which a mesa-shaped strip is etched, and provided on the upper and the lower side with a conductive layer, which forms outside the mesa-shaped strip a junction forming a barrier with a subjacent semiconductor layer, partly satisfies the aforementioned requirements. According to the invention, such a diode comprises an active layer and cladding layers, which comprise (Al) GaInP, and an intermediate layer between the cladding layer and the contact layer, which extends outside the mesa-shaped strip and forms at these areas current-limiting regions due to the junction forming a barrier with the conducting layer. This intermediate layer offers the possibility to optimize the barrier effect, independently of the properties of the remaining semiconductor layers. The intermediate layer can comprise InGaP, InAlGaP or AlGaAs. The invention also relates to a method of manufacturing such a radiation-emitting semiconductor diode, which is very simple and inexpensive.
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