| 摘要 |
PURPOSE:To form a thin film which is superior in film quality by decomposing a reaction accelerating gas in a preliminary decomposing chamber connecting to a reaction chamber for confining plasma by means of forming a magnetic field that is provided at the outside of a cathode electrode and forming an active seed, thereby introducing it into the neighborhood of a substrate. CONSTITUTION:A material gas is fed from the side of a cathode electrode 2 to an interval between both electrodes 2 and 3 and plasma of the material gas is confined by a magnetic field formed with a magnetic field formation means 7 that is provided at the outside of the cathode electrode 2. Then an active seed is formed after decomposing a non-forming film reaction accelerating gas in a preliminary decomposing chamber 8 connecting to a reaction chamber 1 and the active seed is introduced into the neighborhood of a substrate 4. Consequently, both gases having different types of decomposing energy are efficiently decomposed and reaction of a resultant film formation seed which takes place at the surface of the substrate 4 is effectively accelerated by the active seed that is produced by decomposition of the reaction accelerating gas. In this way, the action for confining plasma of the material gas due to the magnetic field formed by the magnetic field formation means and a reaction accelerating action takes concerted effect work together and a thin film that is superior in film quality is formed on the substrate 4. |
